Growth, Characterisation, And Properties of Bi1.8Lu1.2Fe3.6Al1.4O12 Garnet Films Prepared Using Two Different Substrate Temperatures

We prepare highly Bismuth substituted iron garnet of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 by using low and high substrate temperatures (250 °C and 680 °C) during the deposition process inside the vacuum chamber of RF magnetron sputtering system. The crystallization process of this garnet type thin film materials are performed by means of optimized high temperature oven annealing process and conduct several characterization techniques to obtain and evaluate their properties. All the optimally annealed samples possess very promising and attractive properties. Comparatively low coercive force (below 15 Oe) is achieved in garnet films prepared at high substrate temperature of 680 °C, simultaneously with high MO quality and almost in-plane magnetization direction, which are the properties desired in various MO sensing, switching and imaging applications.